Strain Improves Performance of Atomically Thin Semiconductor Material

Dr. Michael Pettes and his graduate student Wei Wu have significantly improved the performance of an atomically thin semiconductor material by stretching it, an accomplishment that could prove beneficial to engineers designing the next generation of flexible electronics, nano devices, and optical sensors. The findings mark the first time scientists have been able to conclusively show that the properties of atomically thin materials can be mechanically manipulated to enhance their performance, Pettes says. Such capabilities could lead to faster computer processors and more efficient sensors.  The process the researchers used to achieve the outcome is also significant in that it offers a reliable new methodology for measuring the impact of strain on ultrathin materials, something that has been difficult to do and a hindrance to innovation.  More information is available at UConn Today:


Published: June 6, 2018

Categories: Faculty News, News

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